TOKYO–Toshiba Corporation (TOKYO: 6502) today announced that it has developed NANO FLASH™-100 much faster access for embedded microcontrollers, based on Toshiba's original NANO FLASH™. Development background: The rich functionality and high speed capabilities of embedded microcontrollers require much flash memory with much faster access rates. Toshiba has recognized and responded to this by developing NANO FLASH™ which merges two features: high speed programming, based on NAND flash memory cell device technology; and NOR flash memory circuit technology. Toshiba has subsequently brought this high level performance to its original microcontrollers and to ARM core-based microcontrollers. Now, as more users use ARM core-based microcontrollers, there is an emerging need for greater speed and large memory capacities. NANO FLASH™-100 is highly suited to this market. Features: The newly developed NANO FLASH™-100 achieves a zero-wait cycle during random access at 100MHz operation (note 1), the industry's top class. This allows the core in ARM-based microcontrollers to fully utilize the superior performance and code density of applications requiring high speed and large capacity memory. Using the ultra low power technology of NANO FLASH™ microcontrollers, a wide range of high speed, low power applications developments are available. Toshiba will follow up on its first NANO FLASH™-100…